类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 输出的数量 | 资历状况 | 输出类型 | 最大输出电流 | 输入电压-Nom | 配置 | 通道数量 | 模拟 IC - 其他类型 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 最大输出电压 | 最小输入电压 | 场效应管类型 | 晶体管应用 | 输入电压(最大) | Rds On(Max)@Id,Vgs | 最大输入电压 | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 控制技术 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 供应电流-最大值(Isup) | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 切换器配置 | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 开关频率-最大值 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 栅源电压 | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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EFC4626R-TR | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 4-XFBGA | 4 | 22 μs | 150°C TJ | Tape & Reel (TR) | yes | 活跃 | 1 (Unlimited) | EAR99 | 1.4W | 未说明 | 未说明 | 2 | 20 ns | 2 N-Channel (Dual) Common Drain | 7.5nC @ 4.5V | 350ns | 24V | 38.4 μs | 10V | 5A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 37.5mOhm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87588NT | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Gold | 表面贴装 | 表面贴装 | 5-LGA | 5 | 20.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 6W | BOTTOM | 无铅 | 260 | 1 | 未说明 | CSD87588 | 1 | 可调式 | 25A | 12V | 2 | 开关稳压器 | Dual | 12.1 ns | 1.3V | -800mV | 2 N-Channel (Half Bridge) | 9.6m Ω @ 15A, 10V | 24V | 1.9V @ 250μA | 脉宽调制 | 736pF @ 15V | 4.1nC @ 4.5V | 36.7ns | 30V | 6.3 ns | BUCK | 25A | 20V | 30V | 逻辑电平门 | 480μm | 5mm | 2.5mm | 400μm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMCPB5530X,115 | Nexperia USA Inc. | 数据表 | 882 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 6-UDFN Exposed Pad | YES | 6 | SILICON | 4A Ta 3.4A Ta | 2 | 40 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 490mW | 6 | 2 | Dual | 增强型MOSFET | DRAIN | 4 ns | N and P-Channel | SWITCHING | 34m Ω @ 3A, 4.5V | 900mV @ 250μA | 660pF @ 10V | 21.7nC @ 4.5V | 15ns | N-CHANNEL AND P-CHANNEL | 16 ns | 3.4A | -650mV | 4A | 0.034Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2016LFG-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-PowerUDFN | 8 | SILICON | 2 | 84.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e4 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 18mOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | HIGH RELIABILITY | 770mW | 260 | 40 | DMN2016L | AEC-Q101 | S-PDSO-N5 | 2 | Dual | 增强型MOSFET | 2.6 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 18m Ω @ 6A, 4.5V | 1.1V @ 250μA | 1472pF @ 10V | 16nC @ 4.5V | 13.2ns | 20V | 46.8 ns | 5.2A | 8V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMD63N02XTA | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | 139.989945mg | SILICON | 2.5A | 2 | 13.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 130mOhm | Matte Tin (Sn) | 20V | 1.04W | 鸥翼 | 260 | 2.4A | 40 | 8 | 增强型MOSFET | 1.25W | 3.4 ns | 2 N-Channel (Dual) | SWITCHING | 130m Ω @ 1.7A, 4.5V | 3V @ 250μA | 700pF @ 15V | 6nC @ 4.5V | 8.1ns | 8.1 ns | 2.4A | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 950μm | 3.1mm | 3.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP3056LSDQ-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 6.9A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | Automotive, AEC-Q101 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 未说明 | 未说明 | 2.5W | 2 P-Channel (Dual) | 45m Ω @ 6A, 10V | 2.1V @ 250μA | 722pF @ 25V | 13.7nC @ 4.5V | 30V | Standard | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK9K35-60E,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | SOT-1205, 8-LFPAK56 | YES | 8 | SILICON | 2 | 3.9 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | 雪崩 额定 | 38W | 鸥翼 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | 2 | Dual | 增强型MOSFET | 38W | DRAIN | 20.5 ns | 2 N-Channel (Dual) | SWITCHING | 32m Ω @ 5A, 10V | 2.1V @ 1mA | 1081pF @ 25V | 14.2nC @ 10V | 3.7ns | 10 ns | 22A | 10V | 60V | 0.035Ohm | 90A | 19.5 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2029USD-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 119.3 ns | 2 | -55°C~150°C TJ | Cut Tape (CT) | 2013 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.2W | 鸥翼 | 260 | 30 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 16.5 ns | 2 N-Channel (Dual) | SWITCHING | 25m Ω @ 6.5A, 4.5V | 1.5V @ 250μA | 1171pF @ 10V | 18.6nC @ 8V | 33.3ns | 20V | 53.5 ns | 5.8A | 8V | 0.025Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMHC6A07N8TC | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 1.39A 1.28A | 4 | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 870mW | DUAL | 鸥翼 | 260 | 40 | ZXMHC6A07 | 8 | 增强型MOSFET | 1.36W | 1.6 ns | 2 N and 2 P-Channel (H-Bridge) | SWITCHING | 250m Ω @ 1.8A, 10V | 3V @ 250μA | 166pF @ 40V | 3.2nC @ 10V | 2.3ns | 60V | N-CHANNEL AND P-CHANNEL | 5.8 ns | 1.28A | 20V | 1.39A | 0.25Ohm | -60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMP6A17DN8TA | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2.7A | 2 | 26.2 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 125mOhm | Matte Tin (Sn) | -60V | 2.15W | 鸥翼 | 260 | -3.1A | 40 | 8 | 2 | Dual | 增强型MOSFET | 2.15W | DRAIN | 2.6 ns | 1.81W | 2 P-Channel (Dual) | SWITCHING | 125m Ω @ 2.3A, 10V | 1V @ 250μA (Min) | 637pF @ 30V | 17.7nC @ 10V | 3.4ns | 60V | 11.3 ns | 3.2A | 20V | 11.1A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||
TT8J11TCR | ROHM Semiconductor | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | SILICON | 2 | 150°C TJ | Cut Tape (CT) | 2012 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 650mW | 未说明 | 未说明 | 8 | R-PDSO-F8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 650mW | 2 P-Channel (Dual) | SWITCHING | 43m Ω @ 3.5A, 4.5V | 1V @ 1mA | 2600pF @ 6V | 22nC @ 4.5V | 12V | 3.5A | 0.043Ohm | 12A | 12V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.5V Drive | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87335Q3DT | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 8-PowerLDFN | 8 | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 6W | 无铅 | 260 | 1 | 0.65mm | not_compliant | 未说明 | CSD87335 | 12V | 开关控制器 | 2 N-Channel (Dual) | 27V | 1.9V @ 250μA | 脉宽调制 | 1050pF @ 15V | 7.4nC @ 4.5V | 20mA | 30V | BUCK | 25A | 750mV | 1500kHz | Standard | 6.7mOhm | 3.3mm | 3.3mm | 1.5mm | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STS8DN6LF6AG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 8A Ta | 2 | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ F6 | 活跃 | 1 (Unlimited) | 8 | 鸥翼 | 未说明 | 未说明 | STS8DN | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 3.2W | 2 N-Channel (Dual) | SWITCHING | 24m Ω @ 4A, 10V | 2.5V @ 250μA | 1340pF @ 25V | 27nC @ 10V | 60V | 8A | 0.026Ohm | 32A | 60V | 72 mJ | METAL-OXIDE SEMICONDUCTOR | 3.2W | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC1029UFDB-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Gold | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | 6 | SILICON | 5.6A 3.8A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.4W | DUAL | 无铅 | 260 | 30 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N and P-Channel | SWITCHING | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 914pF @ 6V | 19.6nC @ 8V | 12V | N-CHANNEL AND P-CHANNEL | 3.8A | 0.029Ohm | 12V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VEC2415-TL-W | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | 150°C TJ | Tape & Reel (TR) | 2015 | yes | 活跃 | 1 (Unlimited) | 1W | not_compliant | 1W | 2 N-Channel (Dual) | 80m Ω @ 1.5A, 10V | 2.6V @ 1mA | 505pF @ 20V | 10nC @ 10V | 60V | 3A | 2.6V | Logic Level Gate, 4V Drive | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MCH6664-TL-W | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | 7.512624mg | 2 | 12 ns | 150°C TJ | Tape & Reel (TR) | 2015 | e6 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 800mW | 未说明 | 未说明 | Dual | 800mW | 4 ns | 2 P-Channel (Dual) | 325m Ω @ 800mA, 10V | 2.6V @ 1mA | 82pF @ 10V | 2.2nC @ 10V | 3.3ns | 30V | 5.4 ns | 1.5A | -2.6V | 20V | 逻辑电平门 | 850μm | 2mm | 1.6mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTZD3152PT1H | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | SOT-563, SOT-666 | YES | 6 | 8.193012mg | SILICON | 2 | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | ESD PROTECTION, LOW THRESHOLD | 250mW | FLAT | 未说明 | 未说明 | 6 | Dual | 增强型MOSFET | 280mW | 10 ns | 2 P-Channel (Dual) | SWITCHING | 900m Ω @ 430mA, 4.5V | 1V @ 250μA | 175pF @ 16V | 2.5nC @ 4.5V | 12ns | 20V | 19 ns | 430mA | 6V | 0.43A | 0.9Ohm | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS8960C | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 1 week ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 7A 5A | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 24MOhm | 快速切换 | 2W | DUAL | 鸥翼 | 7A | 2 | 增强型MOSFET | 2W | 900mW | N and P-Channel | SWITCHING | 24m Ω @ 7A, 10V | 3V @ 250μA | 570pF @ 15V | 7.7nC @ 5V | 16ns | N-CHANNEL AND P-CHANNEL | 5 ns | 7A | 1V | 25V | 7A | 35V | 35V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 2 V | 1.75mm | 4.9mm | 3.9mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
NTGD4161PT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 1 day ago) | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | YES | 6 | SILICON | 1.5A | 2 | 12.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2000 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 600mW | 鸥翼 | 260 | unknown | 40 | 6 | 不合格 | Dual | 增强型MOSFET | 1.1W | 2 P-Channel (Dual) | SWITCHING | 160m Ω @ 2.1A, 10V | 3V @ 250μA | 281pF @ 15V | 7.1nC @ 10V | 9.2ns | 30V | 9.2 ns | -2.1A | 20V | 1.5A | -30V | 10A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STL66DN3LLH5 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 2 | 26 ns | -55°C~175°C TJ | Cut Tape (CT) | Automotive, AEC-Q101, STripFET™ V | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) - annealed | 72W | STL66 | 72W | 8.8 ns | 2 N-Channel (Dual) | 6.5m Ω @ 10A, 10V | 3V @ 250μA | 1500pF @ 25V | 12nC @ 4.5V | 18ns | 30V | 4 ns | 78.5A | 22V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VEC2616-TL-H | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ACTIVE, NOT REC (Last Updated: 1 week ago) | 表面贴装 | 8-SMD, Flat Lead | 8 | 3A 2.5A | 2 | 65 ns | 150°C TJ | Tape & Reel (TR) | 2013 | e6 | yes | Discontinued | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 1W | 8 | Dual | 1W | N and P-Channel | 80m Ω @ 1.5A, 10V | 2.6V @ 1mA | 505pF @ 20V | 10nC @ 10V | 60V | 2.5A | 20V | 逻辑电平门 | 750μm | 2.9mm | 2.3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFH4255DTRPBF | Infineon Technologies | 数据表 | 134 In Stock |
- | 最小起订量: 1 最小包装量: 1 | Tin | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 2 | 64A 105A | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 38W | IRFH4255 | Dual | 31W 38W | 2 N-Channel (Dual) | 3.2m Ω @ 30A, 10V | 2.1V @ 35μA | 1314pF @ 13V | 15nC @ 4.5V | 25V | 30A | 1.6V | 20V | 逻辑电平门 | 900μm | 6mm | 5mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMHC3A01N8TC | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2.17A 1.64A | 4 | 12.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 125mOhm | Matte Tin (Sn) | 870mW | DUAL | 鸥翼 | 260 | 40 | ZXMHC3A01 | 8 | 增强型MOSFET | 1.36W | 2 N and 2 P-Channel (H-Bridge) | SWITCHING | 125m Ω @ 2.5A, 10V | 3V @ 250μA | 190pF @ 25V | 3.9nC @ 10V | 2.3ns | 30V | N-CHANNEL AND P-CHANNEL | 2.9 ns | 1.64A | 20V | 2.17A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSZ215CHXTMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 5.1A 3.2A | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | Tin (Sn) | 雪崩 额定 | 2.5W | DUAL | 无铅 | 未说明 | 未说明 | S-PDSO-N5 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N and P-Channel Complementary | 55m Ω @ 5.1A, 4.5V | 1.4V @ 110μA | 无卤素 | 419pF @ 10V | 2.8nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 3.2A | -20V | 5.1A | 0.055Ohm | 20A | 11 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN62D0UDW-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 320mW | 鸥翼 | 未说明 | 未说明 | AEC-Q101 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 320mW | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 100mA, 4.5V | 1V @ 250μA | 32pF @ 30V | 0.5nC @ 4.5V | 60V | 350mA | 0.35A | 2Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant |
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